absolute maximum ratings parameter units i d @ v gs = 12v, t c = 25c continuous drain current 51 i d @ v gs = 12v, t c = 100c continuous drain current 32.5 i dm pulsed drain current 204 p d @ t c = 25c max. power dissipation 300 w linear derating factor 2.4 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 500 mj i ar avalanche current 51 a e ar repetitive avalanche energy 30 mj dv/dt peak d iode recovery dv/dt 7.3 v/ns t j operating junction -55 to 150 t stg storage temperature range c pckg. mounting surface temp. 300 (for 5s) weight 3.3 (typical) g pre-irradiation international rectifiers rad-hard tm hexfet ? technology provides high performance power mosfets for spaceapplications. this technology has over a decade of proven performance and reliability in satellite applications. these devices have been characterized for both total dose and single event effects (see). the combination of low rdson and low gate charge reduces the power losses in switching applications such as dc to dc converters and motor control. these devices retain all of the well established advantages of mosfets such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. a radiation hardened power mosfet surface mount (smd-2) www.irf.com 1 product summarypart number radiation level r ds(on) i d qpl part number irhna7160 100k rads (si) 0.04 ? 51a jansr2n7432u IRHNA3160 300k rads (si) 0.04 ? 51a jansf2n7432u irhna4160 500k rads (si) 0.04 ? 51a jansg2n7432u irhna8160 1000k rads (si) 0.04 ? 51a jansh2n7432u features: single event effect (see) hardened low r ds(on) low total gate charge simple drive requirements ease of paralleling hermetically sealed surface mount light weight esd class: 3b per mil-std-750, method 1020 for footnotes refer to the last page irhna7160 jansr2n7432u 100v, n-channel ref: mil-prf-19500/664 rad-hard ? hexfet ? technology smd - 2 pd-91396f downloaded from: http:///
2 www.irf.com irhna7160, jansr2n7432u pre-irradiation electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units t est conditions bv dss drain-to-source breakdown voltage 100 v v gs =0 v, i d = 1.0ma ? bv dss / ? t j temperature coefficient of breakdown 0.11 v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source 0.040 v gs = 12v, i d = 32.5a on-state resistance 0.045 ? v gs = 12v, i d = 51a v gs(th) gate threshold voltage 2.0 4.0 v v ds = v gs , i d = 1.0ma g fs forward transconductance 16 s v ds >= 15v, i ds = 32.5a i dss zero gate voltage drain current 25 v ds = 80v,v gs = 0v 250 v ds = 80v v gs = 0v, t j = 125c i gss gate-to-source leakage forward 100 v gs = 20v i gss gate-to-source leakage reverse -100 v gs = -20v q g total gate charge 310 v gs = 12v, i d = 51a q gs gate-to-source charge 53 nc v ds = 50v q gd gate-to-drain (miller) charge 110 t d (on) turn-on delay time 35 v dd = 50v, i d = 51a, t r rise time 150 v gs = 12v, r g = 2.35 ? t d (off) turn-off delay time 150 t f fall time 130 l s + l d total inductance 4.0 c iss input capacitance 5300 v gs = 0v, v ds = 25v c oss output capacitance 1600 p f f = 1.0mhz c rss reverse transfer capacitance 350 na nh ns a note: corresponding spice and saber models are available on the international rectifier website.for footnotes refer to the last page thermal resistance parameter min typ max units t est conditions r thjc junction-to-case 0.42 r thjpcb junction-to-pc board 1.6 solder to a 1 sq. copper clad pc board c/w source-drain diode ratings and characteristics parameter min typ max units t est conditions i s continuous source current (body diode) 51 i sm pulse source current (body diode) 204 v sd diode forward voltage 1.8 v t j = 25c, i s = 51a, v gs = 0v t rr reverse recovery time 520 ns t j = 25c, i f = 51a, di/dt 100a/ s q rr reverse recovery charge 6.5 c v dd 50v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a measured from center of drainpad to center of source pad downloaded from: http:///
www.irf.com 3 pre-irradiation irhna7160, jansr2n7432u international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and testconditions in order to provide a direct comparison. radiation characteristics fig a. typical single event effect, safe operating area international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. for footnotes refer to the last page ion let energy range v ds(v) (mev/(mg/cm 2 )) (mev) (m) @ v gs =0v @ v gs =-5v @ v gs =-10v @ v gs =-15v @ v gs =-20v cu 28 285 43 100 100 100 80 60 br 36.8 305 39 100 90 70 50 0 20 40 60 80 100 120 0 -5 -10 -15 -20 -25 vgs vds cu br 1. part number irhna7160 (jansr2n7432u)2. part numbers IRHNA3160 (jansf2n7432u), irhna4160 (jansg2n7432u) and irhna8160 (jansh2n7432u) table 1. electrical characteristics @ tj = 25c, post total dose irradiation parameter 100k rads(si) 1 300k-1000k rads(si) 2 units test conditions min max min max bv dss drain-to-source breakdown voltage 100 100 v v gs = 0v, i d = 1.0ma v gs(th) gate threshold voltage 2.0 4.0 1.25 4.5 v gs = v ds , i d = 1.0ma i gss gate-to-source leakage forward 100 100 na v gs = 20v i gss gate-to-source leakage reverse -100 -100 v gs = -20 v i dss zero gate voltage drain current 25 50 a v ds = 80v, v gs = 0v r ds(on) static drain-to-source 0.045 0.062 ? v gs = 12v, i d = 32.5a on-state resistance (to-3) v sd diode forward voltage 1.8 1.8 v v gs = 0v, i s = 51a table 2. typical single event effect safe operating area downloaded from: http:///
4 www.irf.com irhna7160, jansr2n7432u pre-irradiation fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 1 10 100 1000 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 10 100 1000 1 10 100 20s pulse width t = 150 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 1 10 100 1000 5 6 7 8 9 10 11 12 v = 50v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 12v 51a downloaded from: http:///
www.irf.com 5 pre-irradiation irhna7160, jansr2n7432u fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 0 2000 4000 6000 8000 10000 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0 40 80 120 160 200 240 280 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 51a v = 20v ds v = 50v ds v = 80v ds 1 10 100 1000 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 1000 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1ms 10ms operation in this area limited by r ds (on) 100 s dc downloaded from: http:///
6 www.irf.com irhna7160, jansr2n7432u pre-irradiation fig 10a. switching time test circuit v ds 90%10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms
1 0.1 %
+ - fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 25 50 75 100 125 150 0 10 20 30 40 50 60 t , case temperature ( c) i , drain current (a) c d 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) downloaded from: http:///
www.irf.com 7 pre-irradiation irhna7160, jansr2n7432u q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 0 200 400 600 800 1000 1200 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 23a 32a 51a downloaded from: http:///
8 www.irf.com irhna7160, jansr2n7432u pre-irradiation pulse width 300 s; duty cycle 2% total dose irradiation with v gs bias. 12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. total dose irradiation with v ds bias. 80 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. repetitive rating; pulse width limited by maximum junction temperature. v dd = 25v, starting t j = 25c, l= 0.38mh peak i l = 51a, v gs = 12v i sd 51a, di/dt 410a/ s, v dd 100v, t j 150c case outline and dimensions smd-2 footnotes: ir world headquarters: 101 n. sepulveda blvd, el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 03/2014 downloaded from: http:///
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